Suchergebnisse
Bestand TH OWL
Artikel & mehr
Suchmaske
Suchergebnisse einschränken oder erweitern
Aktive Suchfilter
Weniger Treffer
Art der Quelle
Thema
- condensed matter physics 5 Treffer
- electrical and electronic engineering 5 Treffer
- electronic, optical and magnetic materials 5 Treffer
- materials chemistry 5 Treffer
- materials science 4 Treffer
-
45 weitere Werte:
- business 3 Treffer
- business.industry 3 Treffer
- mosfet 3 Treffer
- optoelectronics 3 Treffer
- silicon on insulator 3 Treffer
- computational physics 2 Treffer
- voltage 2 Treffer
- 01 natural sciences 1 Treffer
- 0103 physical sciences 1 Treffer
- 010302 applied physics 1 Treffer
- 02 engineering and technology 1 Treffer
- 0210 nano-technology 1 Treffer
- 021001 nanoscience & nanotechnology 1 Treffer
- 7. clean energy 1 Treffer
- biasing 1 Treffer
- boltzmann equation 1 Treffer
- brillouin zone 1 Treffer
- communication channel 1 Treffer
- computer simulation 1 Treffer
- contact resistance 1 Treffer
- continuity equation 1 Treffer
- cutoff frequency 1 Treffer
- electrical resistivity and conductivity 1 Treffer
- electrostatics 1 Treffer
- equivalent oxide thickness 1 Treffer
- equivalent series resistance 1 Treffer
- field-effect transistor 1 Treffer
- figure of merit 1 Treffer
- gate dielectric 1 Treffer
- gate oxide 1 Treffer
- high-κ dielectric 1 Treffer
- law 1 Treffer
- law.invention 1 Treffer
- leakage (electronics) 1 Treffer
- miniaturization 1 Treffer
- oscillation 1 Treffer
- performance enhancement 1 Treffer
- physics 1 Treffer
- point (geometry) 1 Treffer
- poisson distribution 1 Treffer
- poisson's equation 1 Treffer
- quantum hall effect 1 Treffer
- range (statistics) 1 Treffer
- reduction (complexity) 1 Treffer
- scaling 1 Treffer
Sprache
Inhaltsanbieter
11 Treffer
-
In: Semiconductor Science and Technology, Jg. 36 (2021-10-08), S. 115009Online unknownZugriff:
-
In: Semiconductor Science and Technology ; volume 36, issue 11, page 115009 ; ISSN 0268-1242 1361-6641, 2021Online academicJournalZugriff:
-
In: Semiconductor Science and Technology, Jg. 22 (2007-04-23), S. 577-583Online unknownZugriff:
-
In: Semiconductor Science and Technology, Jg. 21 (2006-01-20), S. 261-266Online unknownZugriff:
-
In: Semiconductor Science and Technology, Jg. 26 (2011-10-03), S. 115002-115002Online unknownZugriff:
-
In: Semiconductor Science and Technology, Jg. 23 (2008-05-08), S. 075009-75009Online unknownZugriff:
-
In: Semiconductor Science and Technology ; volume 26, issue 11, page 115002 ; ISSN 0268-1242 1361-6641, 2011Online academicJournalZugriff:
-
In: Semiconductor Science and Technology ; volume 23, issue 7, page 075009 ; ISSN 0268-1242 1361-6641, 2008Online academicJournalZugriff:
-
In: Semiconductor Science and Technology ; volume 22, issue 5, page 577-583 ; ISSN 0268-1242 1361-6641, 2007Online academicJournalZugriff:
-
In: Semiconductor Science and Technology ; volume 21, issue 3, page 261-266 ; ISSN 0268-1242 1361-6641, 2006Online academicJournalZugriff:
-
Molybdenum Gate Work Function Engineering for Ultra-Thin-Body Silicon-on-Insulator (UTB SOI) MOSFETsIn: Japanese Journal of Applied Physics ; volume 42, issue Part 1, No. 4B, page 1979-1982 ; ISSN 0021-4922 1347-4065, 2003Online academicJournalZugriff: